| ‘lllvV|sHA\(? SS1 OPH457 Www'ViShay'C°m Vishay General Semiconductor RATINGS AND cHARAcTERIsTIcs cunvEs(TA : 25 0C unless otherwise noted) I2 I003 Resistive or Inductive Load 3E Eu, I0 : 10E E S8 6 O 1E 3Q EQ 6 g 0 1E mm s E 4 g 0 0‘g 2 TL measured E 0 0mE at the Cathode Band Terminal .3 ‘s E< _0 0.00010 25 50 75 I00 I25 I50 I75 u E Lead Temperature (°C) Percent 0i Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 5.0 I0 000 A E W E3 § 10003 S5 Q3 4 0 SO mR 0w 3 Mw o5 2.0 -5) 10 -I II|||- 0 2 4 5 a w m Average Forward Current (A) Reverse Voltage (V) Fig. 2 - FonNard Power Loss Characteristics Fig. 5 - Typical Junction Capacitance T00 Instantaneous Fon?ard Current (A) E TranSIentTherma| Impedance (°C/W) 0.1 0.1 0 2 0.3 0.4 0.5 0.6 0.7 0 EInstantaneous Forward Voltage (V) t- Pulse Duration (5)Fig. 3 - Typical Instantaneous FonNard Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 02-Aug-13 3 Document Number: 89057 For technical questions within your region: DicdesAmericas@vishay.c0m, Di0desAsia@vishay.com, DiQdesEurope@Vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 |